An optimized parameter design method of SiC/Si hybrid switch considering turn-off current spike
نویسندگان
چکیده
In order to reduce the switching loss of SiC MOSFET/Si IGBT (SiC/Si) hybrid switch, mode that turn off Si prior MOSFET is generally adopted achieved zero-voltage operation IGBT. The minority carrier in N-base region are recombined form exponential attenuation due conductivity modulation effect. When turned off, if recombination process not finished, it needs bear a large collector–emitter voltage change rate, resulting apparent current spike. This spike will increase stress device and produce additional turn-off loss. equivalent model double pulse test circuit SiC/Si switch considering parasitic parameters established, transient given analytically. influence delay time, working conditions on analysed quantitatively. Combined with consideration comprehensive loss, an optimized design method peak proposed, which provides theoretical guidance for high reliability efficiency SiC/Si-based converters.
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ژورنال
عنوان ژورنال: Energy Reports
سال: 2022
ISSN: ['2352-4847']
DOI: https://doi.org/10.1016/j.egyr.2022.08.029